The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2020
Filed:
Aug. 21, 2019
Applicant:
Audiowise Technology Inc., Hsinchu County, TW;
Inventor:
Lien-Sheng Wei, Hsinchu County, TW;
Assignee:
AUDIOWISE TECHNOLOGY INC., Hsinchu County, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 3/157 (2006.01); H02M 3/10 (2006.01); G05F 1/613 (2006.01); G05F 1/46 (2006.01); G05F 3/24 (2006.01); H02M 1/00 (2006.01); H02M 3/156 (2006.01); G05F 1/56 (2006.01);
U.S. Cl.
CPC ...
H02M 3/157 (2013.01); G05F 1/463 (2013.01); G05F 1/468 (2013.01); G05F 1/613 (2013.01); G05F 3/245 (2013.01); H02M 3/10 (2013.01); G05F 1/461 (2013.01); G05F 1/56 (2013.01); H02M 2001/0025 (2013.01); H02M 2003/1566 (2013.01);
Abstract
There is provided a reference voltage generator for providing an adaptive voltage. The reference voltage generator includes a steady current source and a PMOS transistor and an NMOS transistor cascaded to each other. A reference voltage provided by the reference voltage generator is determined by gate-source voltages of the PMOS transistor and the NMOS transistor. As said gate-source voltages vary with the temperature and manufacturing process, the reference voltage forms a self-adaptive voltage.