The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2020

Filed:

May. 10, 2019
Applicant:

Xiamen Sanan Optoelectronics Technology Co., Ltd., Xiamen, CN;

Inventors:

Anhe He, Xiamen, CN;

Suhui Lin, Xiamen, CN;

Jiansen Zheng, Xiamen, CN;

Kangwei Peng, Xiamen, CN;

Xiaoxiong Lin, Xiamen, CN;

Chenke Hsu, Xiamen, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 21/00 (2006.01); H01L 33/62 (2010.01); H01L 23/00 (2006.01); H01L 33/40 (2010.01);
U.S. Cl.
CPC ...
H01L 33/62 (2013.01); H01L 24/13 (2013.01); H01L 24/14 (2013.01); H01L 33/40 (2013.01); H01L 24/06 (2013.01); H01L 24/16 (2013.01); H01L 24/81 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/06102 (2013.01); H01L 2224/13006 (2013.01); H01L 2224/13011 (2013.01); H01L 2224/13016 (2013.01); H01L 2224/13017 (2013.01); H01L 2224/13018 (2013.01); H01L 2224/13019 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/14051 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/81805 (2013.01); H01L 2225/06513 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/37001 (2013.01); H01L 2933/0016 (2013.01);
Abstract

A flip-chip LED chip includes: a substrate; a first semiconductor layer; a light emitting layer; a second semiconductor layer; a local defect region over part of the second semiconductor layer and extending downward to the first semiconductor layer; first and second metal layers respectively over portions of the first and second semiconductor layers; an insulating layer covering the first and second metal layers, the second and first semiconductor layers in the local defect region. The insulating layer has opening structures over the first and second metal layers respectively; a eutectic electrode structure over the insulating layer with openings and including first and second eutectic layers from bottom up at a vertical direction, and including first-type and second-type electrode regions at a horizontal direction. The second eutectic layer does not overlap with the first and second metal layers at the vertical direction.


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