The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2020

Filed:

Sep. 30, 2018
Applicant:

Xiamen Sanan Optoelectronics Technology Co., Ltd., Xiamen, CN;

Inventors:

Gaolin Zheng, Xiamen, CN;

Hou-Jun Wu, Xiamen, CN;

Anhe He, Xiamen, CN;

Shiwei Liu, Xiamen, CN;

Kang-Wei Peng, Xiamen, CN;

Su-Hui Lin, Xiamen, CN;

Chia-Hung Chang, Xiamen, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/38 (2010.01); H01L 33/46 (2010.01);
U.S. Cl.
CPC ...
H01L 33/387 (2013.01); H01L 33/382 (2013.01); H01L 33/38 (2013.01); H01L 33/46 (2013.01);
Abstract

A light-emitting diode includes: a semiconductor epitaxial structure including a first semiconductor layer, a second semiconductor layer disposed over the first semiconductor layer, an active layer disposed between the first and second semiconductor layers; a first electrode electrically coupled to the first semiconductor layer; and a second electrode disposed over and electrically coupled to said second semiconductor layer; wherein: the first electrode includes a plurality of first sub-electrodes; the second electrode includes a plurality of second sub-electrodes; and any two adjacent first sub-electrodes and/or second sub-electrodes have a same projection distance.


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