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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10707379 B1

PDFFull Text
Date of Patent:
Jul. 07, 2020

Filed:

Jul. 02, 2018

Configuration for optoelectronic device

Applicant:

Sensor Electronic Technology, Inc., Columbia, SC (US);

Inventors:

Alexander Dobrinsky, Silver Spring, MD (US);

Maxim S. Shatalov, Columbia, SC (US);

Mikhail Gaevski, West Columbia, SC (US);

Michael Shur, Vienna, VA (US);

Assignee:

Sensor Electronic Technology, Inc., Columbia, SC (US);

Attorney:

LaBatt, LLC

Primary Examiner:

Stephen M Bradley

Assistant Examiner:

Wasiul Haider

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 33/38 (2010.01); H01L 33/12 (2010.01); H01L 33/14 (2010.01); H01L 33/32 (2010.01); H01L 33/40 (2010.01); H01L 33/46 (2010.01); H01L 33/00 (2010.01); H01L 31/0352 (2006.01); H01L 31/0236 (2006.01); H01L 31/0304 (2006.01); H01L 31/0224 (2006.01); H01L 31/0232 (2014.01); H01L 31/0216 (2014.01); H01L 31/18 (2006.01); H01L 33/20 (2010.01); H01L 33/22 (2010.01); H01L 33/06 (2010.01); H01L 33/04 (2010.01);
U.S. Cl.
CPC ...
H01L 33/387 (2013.01); H01L 31/02161 (2013.01); H01L 31/02327 (2013.01); H01L 31/02363 (2013.01); H01L 31/022408 (2013.01); H01L 31/03048 (2013.01); H01L 31/035236 (2013.01); H01L 31/1848 (2013.01); H01L 31/1852 (2013.01); H01L 31/1864 (2013.01); H01L 33/007 (2013.01); H01L 33/0095 (2013.01); H01L 33/12 (2013.01); H01L 33/145 (2013.01); H01L 33/20 (2013.01); H01L 33/32 (2013.01); H01L 33/38 (2013.01); H01L 33/405 (2013.01); H01L 33/46 (2013.01); H01L 33/04 (2013.01); H01L 33/06 (2013.01); H01L 33/22 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0091 (2013.01);
Abstract

An optoelectronic device with a multi-layer contact is described. The optoelectronic device can include an n-type semiconductor layer having a surface. A mesa can be located over a first portion of the surface of the n-type semiconductor layer and have a mesa boundary, which has a shape including a plurality of interconnected fingers. The n-type semiconductor layer can have a shape at least partially defined by the mesa boundary. A first n-type contact layer can be located adjacent to another portion of the n-type semiconductor contact layer, where the first n-type contact layer forms an ohmic contact with the n-type semiconductor layer. A second contact layer can be located over a second portion of the n-type semiconductor contact layer, where the second contact layer is formed of a reflective material.

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