The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2020

Filed:

Oct. 03, 2019
Applicant:

Epistar Corporation, Hsinchu, TW;

Inventors:

Tzung-Shiun Yeh, Hsinchu, TW;

Li-Ming Chang, Hsinchu, TW;

Chien-Fu Shen, Hsinchu, TW;

Assignee:

EPISTAR CORPORATION, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/36 (2010.01); H01L 33/62 (2010.01); H01L 33/38 (2010.01); H01L 33/14 (2010.01); H01L 33/20 (2010.01);
U.S. Cl.
CPC ...
H01L 33/36 (2013.01); H01L 33/38 (2013.01); H01L 33/62 (2013.01); H01L 33/14 (2013.01); H01L 33/20 (2013.01);
Abstract

An optoelectronic device includes a substrate; a semiconductor stack, formed on the substrate; a current blocking region, including a first pad portion formed above the semiconductor stack and wherein the current blocking region includes transparent insulated material; a transparent conductive layer, formed on the current blocking region and/or a surface of the semiconductor stack; a first opening, formed in the first pad portion, wherein in a top view, the first opening includes elongated shape; and a first electrode, including a first pad electrode formed above the first pad portion of the current blocking region and electrically connecting to the semiconductor stack through the first opening.


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