The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2020

Filed:

Dec. 12, 2018
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Bahman Hekmatshoar-Tabari, White Plains, NY (US);

Devendra K. Sadana, Pleasantville, NY (US);

Ghavam G. Shahidi, Pound Ridge, NY (US);

Davood Shahrjerdi, White Plains, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0747 (2012.01); H01L 31/05 (2014.01); H01L 31/0352 (2006.01); B82Y 20/00 (2011.01); H01L 31/0224 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0747 (2013.01); B82Y 20/00 (2013.01); H01L 31/022441 (2013.01); H01L 31/035236 (2013.01); H01L 31/035254 (2013.01); H01L 31/0516 (2013.01); Y02E 10/50 (2013.01);
Abstract

A photovoltaic device and method include a substrate coupled to an emitter side structure on a first side of the substrate and a back side structure on a side opposite the first side of the substrate. The emitter side structure or the back side structure include layers alternating between wide band gap layers and narrow band gap layers to provide a multilayer contact with an effectively increased band offset with the substrate and/or an effectively higher doping level over a single material contact. An emitter contact is coupled to the emitter side structure on a light collecting end portion of the device. A back contact is coupled to the back side structure opposite the light collecting end portion.


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