The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2020

Filed:

Mar. 14, 2019
Applicant:

Toshiba Memory Corporation, Minato-ku, Tokyo, JP;

Inventors:

Megumi Yakabe, Kanagawa, JP;

Yasushi Nakasaki, Kanagawa, JP;

Tadaomi Daibou, Kanagawa, JP;

Tadashi Kai, Tokyo, JP;

Junichi Ito, Kanagawa, JP;

Masahiro Koike, Tokyo, JP;

Shogo Itai, Kanagawa, JP;

Takamitsu Ishihara, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/82 (2006.01); H01L 43/12 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/82 (2013.01); H01L 43/12 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01);
Abstract

According to one embodiment, a magnetic memory device includes a stacked structure including first and second magnetic layers having variable and fixed magnetization directions, respectively, and a nonmagnetic layer provided between the first and second magnetic layers and containing a first compound containing first cationic and anionic elements, and a predetermined-material layer provided around side surfaces of the stacked structure and containing a second compound containing second added cationic and second added anionic elements. An absolute value of a valence number (ionic valency) of the second added cationic element is less than that of the first cationic element, and an absolute value of a valence number (ionic valency) of the second added anionic element is less than that of the first anionic element.


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