The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2020
Filed:
May. 18, 2015
Ramot AT Tel Aviv University Ltd., Tel Aviv, IL;
Gideon Segev, Kibutz Hahotrim, IL;
Iddo Amit, Tel Aviv, IL;
Alexander Henning, Losheim am See, DE;
Yossi Rosenwaks, Hod Hasharon, IL;
RAMOT AT TEL AVIV UNIVERSITY LTD., Tel Aviv, IL;
Abstract
A transistor (), including a planar semiconducting substrate (), a source () formed on the substrate, a first drain () formed on the substrate, and a second drain () formed on the substrate in a location physically separated from the first drain. At least one gate () is formed on the substrate and is configured to selectably apply an electrical potential to the substrate in either a first spatial pattern, which causes a first conductive path () to be established within the substrate from the source to the first drain, or a second spatial pattern, which causes a second conductive path to be established within the substrate from the source to the second drain.