The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2020
Filed:
Mar. 01, 2019
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventors:
Markus Zundel, Egmating, DE;
Franz Hirler, Isen, DE;
Assignee:
Infineon Technology Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7811 (2013.01); H01L 23/5226 (2013.01); H01L 23/53257 (2013.01); H01L 23/53266 (2013.01); H01L 29/08 (2013.01); H01L 29/1095 (2013.01); H01L 29/407 (2013.01); H01L 29/41741 (2013.01); H01L 29/41766 (2013.01); H01L 29/66727 (2013.01); H01L 29/66734 (2013.01); H01L 29/7813 (2013.01);
Abstract
Disclosed is a transistor device and a method for producing thereof. The transistor device includes at least one transistor cell, wherein the at least one transistor cell includes: a source region, a body region and a drift region in a semiconductor body; a gate electrode dielectrically insulated from the body region by a gate dielectric; a field electrode dielectrically insulated from the drift region by a field electrode dielectric; and a contact plug extending from a first surface of the semiconductor body to the field electrode and adjoining the source region and the body region.