The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2020
Filed:
Aug. 21, 2018
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Toshiba Electronic Devices & Storage Corporation, Minato-ku, JP;
Tatsuya Shiraishi, Nonoichi, JP;
KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Minato-ku, JP;
Abstract
According to one embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a first electrode, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a second electrode, and a third electrode. The first semiconductor region includes a first region and a second region. The second semiconductor region is provided on the second region. The third semiconductor region is provided on a portion of the second semiconductor region. The third electrode is provided on the second semiconductor region and the first semiconductor region. A first layer is provided on the third electrode. The first layer includes at least one selected from the group consisting of titanium, nickel, and vanadium. A second layer is provided on the first layer. The second layer includes silicon and at least one selected from the group consisting of nitrogen and oxygen.