The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2020
Filed:
Feb. 26, 2019
Toshiba Memory Corporation, Tokyo, JP;
Hiroyasu Sato, Yokkaichi Mie, JP;
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Abstract
A semiconductor storage device includes a substrate, a plurality of first gate electrodes on the substrate and arranged in a thickness direction of the substrate, and a first semiconductor pillar extending in the thickness direction of the substrate through the plurality of first gate electrodes, the first semiconductor pillar including a first portion facing the plurality of first gate electrodes and a second portion farther from the substrate than the first portion. The semiconductor storage device also includes a second gate electrode on the substrate farther from the substrate than the plurality of first gate electrodes, and a second semiconductor pillar extending in the thickness direction of the substrate through the second gate electrode, and connected to the first semiconductor pillar at the second portion of the first semiconductor pillar. The second portion of the first semiconductor pillar contains carbon (C).