The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2020
Filed:
Aug. 12, 2019
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Tatsuo Shimizu, Shinagawa, JP;
Ryosuke Iijima, Setagaya, JP;
Johji Nishio, Machida, JP;
Teruyuki Ohashi, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Abstract
A semiconductor device according to an embodiment includes a SiC layer, an electrode electrically connected to the SiC layer and an impurity region provided between the SiC layer and the electrode. The impurity region includes first position and second position, the first position having highest concentration of an impurity in the impurity region, the highest concentration being not lower than 1×10cmand not higher than 5×10cm, the second position having concentration of the impurity one digit lower than the highest concentration, the first position being between the electrode and the second position, a distance between the first position and the second position being 50 nm or shorter.