The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2020

Filed:

Sep. 06, 2018
Applicant:

Japan Display Inc., Minato-ku, JP;

Inventor:

Manabu Yamashita, Minato-ku, JP;

Assignee:

Japan Display Inc., Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 27/12 (2006.01); H01L 23/532 (2006.01); G02F 1/1337 (2006.01); G02F 1/1343 (2006.01); H01L 27/32 (2006.01); G02F 1/1362 (2006.01); G09G 3/36 (2006.01); G02F 1/1368 (2006.01);
U.S. Cl.
CPC ...
H01L 27/124 (2013.01); G02F 1/1368 (2013.01); G02F 1/133784 (2013.01); G02F 1/134309 (2013.01); G02F 1/136227 (2013.01); G02F 1/136286 (2013.01); G09G 3/3677 (2013.01); H01L 23/5329 (2013.01); H01L 27/1225 (2013.01); H01L 27/1251 (2013.01); H01L 27/14601 (2013.01); H01L 27/3244 (2013.01); G02F 2201/121 (2013.01); G02F 2201/123 (2013.01); H01L 27/3262 (2013.01);
Abstract

The purpose of the invention is to countermeasure a disconnection between the drain electrode or the source electrode and the wiring or the electrode formed on the insulating film via through hole. The concrete structure is that: A display device having a display area including a plurality of pixels comprising: the pixel includes a thin film transistor having a semiconductor layer as an active element, a first insulating film is formed to cover a drain electrode of the thin film transistor, the drain electrode is connected with an electrode or an wiring that are formed on the first insulating film via a through hole, an oxide semiconductor layer exists between the drain electrode and the first insulating film, the oxide semiconductor layer does not exist at the bottom of the through hole.


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