The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2020

Filed:

Dec. 19, 2018
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventors:

Balaji Padmanabhan, Tempe, AZ (US);

Prasad Venkatraman, Gilbert, AZ (US);

Zia Hossain, Tempe, AZ (US);

Chun-Li Liu, Scottsdale, AZ (US);

Woochul Jeon, Phoenix, AZ (US);

Jason McDonald, Gilbert, AZ (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 21/8258 (2006.01); H01L 21/74 (2006.01); H01L 23/367 (2006.01); H01L 29/417 (2006.01); H01L 29/778 (2006.01); H01L 29/10 (2006.01); H01L 27/02 (2006.01); H01L 29/872 (2006.01); H01L 29/20 (2006.01); H01L 23/48 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 21/743 (2013.01); H01L 21/8258 (2013.01); H01L 23/3677 (2013.01); H01L 27/0255 (2013.01); H01L 27/0266 (2013.01); H01L 27/0688 (2013.01); H01L 29/1087 (2013.01); H01L 29/41766 (2013.01); H01L 29/7783 (2013.01); H01L 23/481 (2013.01); H01L 29/2003 (2013.01); H01L 29/861 (2013.01); H01L 29/872 (2013.01); H01L 2224/40245 (2013.01); H01L 2224/48247 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A method for forming a cascode rectifier structure includes providing a group III-V semiconductor structure includes a heterostructure disposed on a semiconductor substrate. A first current carrying electrode and a second current carrying electrode are provided adjacent a major surface of the heterostructure and a control electrode is provided between the first and second current carrying electrode. A rectifier device is provided integrated with the group III-V semiconductor structure and is electrically connected to the first current carrying electrode and to a third electrode. The control electrode is provided further electrically connected to the semiconductor substrate and the second current path is generally perpendicular to a primary current path between the first and second current carrying electrodes. The cascode rectifier structure is provided as a two terminal device.


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