The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2020

Filed:

Jun. 21, 2018
Applicant:

Imec Vzw, Leuven, BE;

Inventor:

Frederic Lazzarino, Hamme-Mille, BE;

Assignee:

IMEC VZW, Leuven, BE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 27/02 (2006.01); H01L 21/033 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); H01L 21/02518 (2013.01); H01L 21/0337 (2013.01); H01L 21/0338 (2013.01); H01L 21/76816 (2013.01); H01L 21/76877 (2013.01); H01L 23/528 (2013.01);
Abstract

A method is provided for patterning a target layer, the method comprising: (i) forming above the target layer a line mask and a mandrel mask, wherein forming the line mask comprises forming parallel material lines extending in a longitudinal direction, wherein forming the mandrel mask comprises forming a mandrel mask having sidewalls including at least a first sidewall extending transverse to a plurality of the material lines; (ii) forming on the sidewalls of the mandrel mask a sidewall spacer including a first sidewall spacer portion extending along the first sidewall; (iii) partially removing the sidewall spacer such that a remainder of the sidewall spacer comprises at least a part of the first sidewall spacer portion; and (iv) subsequent to removing the mandrel mask, transferring into the target layer a pattern defined by the line mask and the remainder of the sidewall spacer.


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