The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2020
Filed:
Nov. 30, 2017
Globalfoundries Inc., Grand Cayman, KY;
Emre Alptekin, Wappingers Falls, NY (US);
Nicolas L. Breil, San Jose, CA (US);
Christian Lavoie, Pleasantville, NY (US);
Ahmet S. Ozcan, Chappaqua, NY (US);
Kathryn T. Schonenberg, Wappingers Falls, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
An aspect of the invention includes a method for forming a contact in a dielectric layer over a semiconductor substrate. The method may comprise: forming a contact opening in a dielectric layer over the semiconductor substrate to expose an upper portion of the semiconductor substrate; depositing a first liner layer to conformally coat the contact opening; causing a portion of the first liner layer to diffuse into the upper portion of the semiconductor substrate to form a first intermix region at the upper portion of the semiconductor substrate; depositing a refractory metal layer over the first intermix region; and depositing a metal in the contact opening thereby forming the contact.