The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2020
Filed:
Oct. 10, 2018
Applicant:
Rohm Co., Ltd., Kyoto-shi, Kyoto, JP;
Inventors:
Hajime Okuda, Kyoto, JP;
Yoshinori Fukuda, Kyoto, JP;
Assignee:
ROHM CO., LTD., Kyoto, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 21/762 (2006.01); H01L 21/76 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49558 (2013.01); H01L 21/76 (2013.01); H01L 21/76224 (2013.01); H01L 23/4952 (2013.01); H01L 23/49513 (2013.01); H01L 23/49524 (2013.01); H01L 23/49562 (2013.01); H01L 23/562 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/45014 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48464 (2013.01); H01L 2224/4903 (2013.01); H01L 2224/49171 (2013.01); H01L 2924/181 (2013.01); H01L 2924/19107 (2013.01);
Abstract
A semiconductor device includes a semiconductor layer that has a main surface including a defined region defined by a trench, a trench insulation layer formed in the trench, a field insulation layer that covers the defined region away from the trench, and a bridge insulation layer that is formed in a region between the trench and the field insulation layer in the defined region and that is connected to the trench insulation layer and to the field insulation layer.