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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10707074 B1

PDFFull Text
Date of Patent:
Jul. 07, 2020

Filed:

Mar. 22, 2018

Method for manufacturing semiconductor device, non-transitory computer-readable recording medium, and substrate processing apparatus

Applicant:

Hitachi Kokusai Electric Inc., Tokyo, JP;

Inventors:

Yoshimasa Nagatomi, Toyama, JP;

Hirohisa Yamazaki, Toyama, JP;

Assignee:

Kokusai Electric Corporation, Tokyo, JP;

Attorney:

Volpe and Koenig, P.C.

Primary Examiner:

David E Graybill

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/673 (2006.01); C23C 16/52 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); C23C 16/40 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); C23C 16/405 (2013.01); C23C 16/4412 (2013.01); C23C 16/45527 (2013.01); C23C 16/45563 (2013.01); C23C 16/45578 (2013.01); C23C 16/52 (2013.01); H01L 21/02181 (2013.01); H01L 21/02189 (2013.01); H01L 21/67303 (2013.01); H01L 27/1085 (2013.01);
Abstract

By sequentially performing, a plurality of times, a step of supplying a mixed gas of an organic metal-containing source gas and an inert gas to a process chamber housing a substrate by adjusting a flow velocity of the mixed gas on the substrate to 7.8 m/s to 15.6 m/s and adjusting a partial pressure of the organic metal-containing source gas in the mixed gas to 0.167 to 0.3, a step of exhausting the process chamber, a step of supplying an oxygen-containing gas to the process chamber, and a step of exhausting the process chamber, a metal oxide film is formed on the substrate.

Find Patent Forward Citations

Nagatomi, Yoshimasa. (2020). Method for manufacturing semiconductor device, non-transitory computer-readable recording medium, and substrate processing apparatus (U.S. Patent No. 10707074). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10707074

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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