The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2020
Filed:
Feb. 01, 2017
Applicant:
Tdk Corporation, Tokyo, JP;
Inventors:
Kumiko Yamazaki, Tokyo, JP;
Hiroshi Chihara, Tokyo, JP;
Yuki Nagamine, Tokyo, JP;
Junichi Yamazaki, Tokyo, JP;
Yuji Umeda, Tokyo, JP;
Assignee:
TDK CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/08 (2006.01); H01G 4/33 (2006.01); C23C 14/00 (2006.01); C23C 14/06 (2006.01); H01B 3/00 (2006.01); C01B 21/082 (2006.01); C30B 29/10 (2006.01); C23C 16/30 (2006.01);
U.S. Cl.
CPC ...
H01G 4/08 (2013.01); C01B 21/0821 (2013.01); C23C 14/0021 (2013.01); C23C 14/0676 (2013.01); C30B 29/10 (2013.01); H01B 3/00 (2013.01); H01G 4/33 (2013.01); C01P 2002/34 (2013.01); C01P 2006/40 (2013.01); C23C 16/308 (2013.01);
Abstract
A polycrystalline dielectric thin film and a capacitor element have a large relative dielectric constant. The polycrystalline dielectric thin film has a perovskite oxynitride as a principal component. The perovskite oxynitride is represented by compositional formula ABON(a1+b1+o+n=5), and the a-axis length of the crystal lattice of the perovskite oxynitride is larger than a theoretical value.