The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2020
Filed:
Jul. 24, 2018
Applicant:
Stmicroelectronics (Rousset) Sas, Rousset, FR;
Inventors:
Francois Tailliet, Fuveau, FR;
Marc Battista, Allauch, FR;
Assignee:
STMicroelectronics (Rousset) SAS, Rousset, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 14/00 (2006.01); G11C 8/10 (2006.01); G11C 7/06 (2006.01); G11C 11/419 (2006.01); G11C 16/08 (2006.01); G11C 16/04 (2006.01); G11C 16/24 (2006.01);
U.S. Cl.
CPC ...
G11C 14/0063 (2013.01); G11C 7/06 (2013.01); G11C 8/10 (2013.01); G11C 11/419 (2013.01); G11C 16/0433 (2013.01); G11C 16/08 (2013.01); G11C 16/24 (2013.01);
Abstract
Disclosed herein is a method of operating a non-volatile static random access NVSRAM memory formed from words. Each word includes NVSRAM cells, each of those NVSRAM cells having an SRAM cell and an electronically erasable programmable read only memory EEPROM cell. If the SRAM cells of a word have been accessed since powerup, data is read from the NVSRAM cells of that word through the SRAM cells. However, if the SRAM cells of that word have not been written since powerup, data is read from the NVSRAM cells of that word through the EEPROM cells.