The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2020
Filed:
Sep. 29, 2015
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Yotaro Mori, Kanagawa, JP;
Makoto Kitagawa, Chiba, JP;
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Abstract
A non-volatile memory device of the disclosure includes a memory cell, a writing circuit, and a current controller. The memory cell is disposed at an intersection of a first wiring and a second wiring, and includes a variable resistance element having a resistance state that is variable between a first resistance state and a second resistance state. The writing circuit varies the variable resistance element from the first resistance state to the second resistance state, and thereby performs writing of data on the memory cell. The current controller controls a current and thereby limits the current to a predetermined limit current value. The current is caused to flow through the first wiring or the second wiring by the writing circuit upon performing of the writing of the data. The current controller causes the predetermined limit current value to be a first limit current value in a period before a time at which the variable resistance element is varied to the second resistance state, and varies the predetermined limit current value from the first limit current value to a second limit current value after the time at which the variable resistance element is varied to the second resistance state.