The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2020

Filed:

Oct. 22, 2018
Applicant:

Fujifilm Electronic Materials U.s.a., Inc., N. Kingstown, RI (US);

Inventors:

Alexei P. Leonov, Gilbert, AZ (US);

Abhudaya Mishra, Gilbert, AZ (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/321 (2006.01); C09G 1/02 (2006.01); C09K 13/02 (2006.01); C09G 1/00 (2006.01); C23F 1/10 (2006.01);
U.S. Cl.
CPC ...
C09G 1/02 (2013.01); C09G 1/00 (2013.01); C09K 13/02 (2013.01); C23F 1/10 (2013.01); H01L 21/3212 (2013.01);
Abstract

The disclosure provides chemical mechanical polishing compositions and methods for polishing polysilicon films with high removal rates. The compositions include 1) an abrasive; 2) at least one compound of structure (I): 3) at least one compound of structure (II): and 4) water; in which the composition does not include tetramethylammonium hydroxide or a salt thereof. The variables n, R-R, X, Y, and Z-Zin structures (I) and (II) are defined in the Specification. The synergistic effect of the compounds of structures (I) and (II) in these chemical mechanical polishing compositions leads to high polysilicon films material removal rate during polishing.


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