The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2020
Filed:
Nov. 04, 2019
Pear Labs Llc, Blue Springs, MO (US);
Christopher D. Hruska, Blue Springs, MO (US);
Pear Labs LLC, Blue Springs, MO (US);
Abstract
A plasma gate device comprises a plasma creation chamber, first through fourth dielectrics, and first through sixth electrodes. The plasma creation chamber is a space in which plasma is created from a first fluid and a second fluid. The first and second dielectrics form upper and lower boundaries on a first side of the plasma creation chamber. The third and fourth dielectrics form upper and lower boundaries on a second side of the plasma creation chamber. The first and second electrodes receive voltages to generate a first electric field which creates a first plasma on the first side of the plasma creation chamber. The third and fourth electrodes receive voltages to generate a second electric field which creates a second plasma on the second side of the plasma creation chamber. The fifth electrode extracts electrons from the first plasma. The sixth electrode injects electrons into the second plasma.