The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2020

Filed:

Dec. 14, 2016
Applicant:

Nitto Denko Corporation, Ibaraki-shi, Osaka, JP;

Inventors:

Kazuto Yamagata, Ibaraki, JP;

Hironobu Machinaga, Ibaraki, JP;

Takehiro Ui, Ibaraki, JP;

Hiroichi Ukei, Ibaraki, JP;

Yuya Kitagawa, Ibaraki, JP;

Kazuaki Sasa, Ibaraki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05K 9/00 (2006.01); H01Q 17/00 (2006.01); B32B 7/12 (2006.01); B32B 27/30 (2006.01); B32B 27/08 (2006.01); B32B 27/28 (2006.01); H01Q 1/32 (2006.01); B32B 27/18 (2006.01); G01S 13/931 (2020.01); B32B 15/08 (2006.01); B32B 15/20 (2006.01); B32B 33/00 (2006.01);
U.S. Cl.
CPC ...
H05K 9/0088 (2013.01); B32B 7/12 (2013.01); B32B 27/08 (2013.01); B32B 27/18 (2013.01); B32B 27/28 (2013.01); B32B 27/30 (2013.01); B32B 27/304 (2013.01); B32B 27/306 (2013.01); G01S 13/931 (2013.01); H01Q 1/3283 (2013.01); H01Q 17/00 (2013.01); H05K 9/00 (2013.01); H05K 9/0094 (2013.01); B32B 15/08 (2013.01); B32B 15/20 (2013.01); B32B 33/00 (2013.01); B32B 2255/06 (2013.01); B32B 2255/10 (2013.01); B32B 2255/205 (2013.01); B32B 2264/102 (2013.01); B32B 2264/105 (2013.01); B32B 2307/202 (2013.01); B32B 2307/204 (2013.01); B32B 2307/40 (2013.01); B32B 2457/00 (2013.01);
Abstract

For the purpose of providing an electromagnetic wave absorber capable of holding excellent performance over a long period of time, the electromagnetic wave absorber includes: a dielectric layer B including a polymer film and having a first surface and a second surface; a resistive layer A formed on the first surface of the dielectric layer Band containing indium tin oxide as a main component; and an electrically conductive layer C formed on the second surface of the dielectric layer B and having a sheet resistance lower than that of the resistive layer A, wherein the indium tin oxide in the resistive layer A contains 20 to 40 wt. % of tin oxide based on the total weight of the indium tin oxide.


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