The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2020

Filed:

May. 30, 2016
Applicant:

Mitsubishi Electric Corporation, Chiyoda-ku, JP;

Inventors:

Takeshi Horiguchi, Chiyoda-ku, JP;

Yasushi Nakayama, Chiyoda-ku, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02H 9/00 (2006.01); H03K 17/082 (2006.01); H02M 1/08 (2006.01); H02M 1/00 (2006.01); H03K 17/16 (2006.01); G01R 31/27 (2006.01);
U.S. Cl.
CPC ...
H03K 17/0822 (2013.01); G01R 31/27 (2013.01); H02M 1/00 (2013.01); H02M 1/08 (2013.01); H03K 17/0828 (2013.01); H03K 17/166 (2013.01); H03K 17/168 (2013.01);
Abstract

A voltage driver shifts a voltage on a gate as a control terminal of a power semiconductor element in response to an ON command or an OFF command. A gate voltage detector generates a detection signal of a gate-emitter voltage. A delay signal generator generates a delay signal obtained by adding a delay time to the detection signal. A subtractor generates a voltage difference signal between the detection signal and the delay signal. When the voltage difference signal exceeds a reference voltage during an operation of turning on the power semiconductor element, a short-circuit state detector detects a hard-switching fault.


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