The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2020

Filed:

Mar. 26, 2018
Applicant:

Oclaro Japan, Inc., Sagamihara, Kanagawa, JP;

Inventors:

Akira Nakanishi, Tokyo, JP;

Noriko Sasada, Kanagawa, JP;

Takayuki Nakajima, Tokyo, JP;

Assignee:

Lumentum Japan, Inc., Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/042 (2006.01); H01S 5/227 (2006.01); H01S 5/022 (2006.01); H01S 5/22 (2006.01); H05K 1/18 (2006.01); H05K 1/14 (2006.01); H04B 10/40 (2013.01); H01S 5/343 (2006.01); H01S 5/028 (2006.01); H01S 5/02 (2006.01); H01S 5/20 (2006.01);
U.S. Cl.
CPC ...
H01S 5/0425 (2013.01); H01S 5/02276 (2013.01); H01S 5/22 (2013.01); H01S 5/2275 (2013.01); H01S 5/0202 (2013.01); H01S 5/0206 (2013.01); H01S 5/028 (2013.01); H01S 5/0287 (2013.01); H01S 5/0421 (2013.01); H01S 5/2086 (2013.01); H01S 5/34306 (2013.01); H01S 5/34313 (2013.01); H01S 5/34366 (2013.01); H01S 2301/176 (2013.01); H01S 2304/04 (2013.01); H04B 10/40 (2013.01); H05K 1/147 (2013.01); H05K 1/181 (2013.01); H05K 2201/10121 (2013.01);
Abstract

Provided is an optical semiconductor device including a semiconductor substrate; a first semiconductor multilayer that is stacked on a first surface side of the semiconductor substrate, has a mesa structure extending along a light emitting direction, and emits light from an exit end surface; an electrode pad portion for wire bonding which is electrically connected to the upper surface of the mesa structure of the first semiconductor multilayer, is disposed on one side of the mesa structure, and is electrically connected to outside; and an electrode pad peripheral portion including a first rising surface which is in contact with the outer edge of the electrode pad portion on the exit end surface side and rises along the stacking direction from the electrode pad portion, in which a lower surface of the electrode pad portion is higher than the upper surface of the mesa structure of the first semiconductor multilayer.


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