The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2020

Filed:

Mar. 28, 2018
Applicant:

Nichia Corporation, Anan-shi, Tokushima, JP;

Inventors:

Tadaaki Miyata, Yokohama, JP;

Yoshihiro Kimura, Yokohama, JP;

Assignee:

NICHIA CORPORATION, Anan-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/02 (2006.01); H01S 5/22 (2006.01); H01S 5/022 (2006.01); H01S 5/40 (2006.01);
U.S. Cl.
CPC ...
H01S 5/02208 (2013.01); H01S 5/0215 (2013.01); H01S 5/02216 (2013.01); H01S 5/02248 (2013.01); H01S 5/02276 (2013.01); H01S 5/02292 (2013.01); H01S 5/221 (2013.01); H01S 5/4087 (2013.01); H01S 5/0071 (2013.01); H01S 5/02296 (2013.01);
Abstract

Provided is a light source device, including: a base member; a semiconductor laser disposed on the base member; a lateral wall portion formed so as to surround the semiconductor laser; a light-transmissive lid covering a gap surrounded by the base member and the lateral wall portion; and a connection member that airtightly connects an upper surface of the lateral wall portion and a lower surface of the lid over an entire perimeter of the lateral wall portion. The lateral wall portion has a reflecting surface which is an inside surface connected to an upper surface, the reflecting surface being inclined so that light emitted from the semiconductor laser is reflected toward the lid. A dielectric film is continuously formed on the reflecting surface and the upper surface. A height of the connection member is greater than a height of the dielectric film formed on the upper surface.


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