The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2020
Filed:
Aug. 29, 2018
Applicant:
Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;
Inventor:
Koji Okuno, Kiyosu, JP;
Assignee:
TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-Ken, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); C23C 16/56 (2006.01); C23C 16/30 (2006.01); C30B 25/18 (2006.01); C23C 16/20 (2006.01); C23C 16/455 (2006.01); C23C 16/02 (2006.01); C30B 29/40 (2006.01); H01L 33/32 (2010.01); H01L 33/12 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0079 (2013.01); C23C 16/0281 (2013.01); C23C 16/20 (2013.01); C23C 16/303 (2013.01); C23C 16/45502 (2013.01); C23C 16/56 (2013.01); C30B 25/183 (2013.01); C30B 29/403 (2013.01); H01L 33/007 (2013.01); H01L 33/12 (2013.01); H01L 33/32 (2013.01);
Abstract
The method comprises: forming an Al layer or Al droplets on a surface of a substrate by flowing an organic metal gas containing Al without flowing an ammonia gas; forming an AlN buffer layer on the Al layer or Al droplets by flowing the organic metal gas containing Al and the ammonia gas, the Al layer or Al droplets remaining as a metal under the AlN buffer layer; forming the Group III nitride semiconductor on the AlN buffer layer; and peeling the Group III nitride semiconductor in a place of the Al layer or Al droplets from the substrate.