The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2020

Filed:

Oct. 03, 2018
Applicants:

The Royal Institution for the Advancement of Learning/mcgill University, Montreal, CA;

Valorbec, L.p., Montreal, CA;

Inventors:

Monireh Moayedi Pour Fard, Austin, TX (US);

Christopher Williams, Montreal, CA;

Glenn Cowan, Montreal, CA;

Odile Liboiron-Ladouceur, Montreal, CA;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/103 (2006.01); H01L 27/144 (2006.01); G01J 1/16 (2006.01);
U.S. Cl.
CPC ...
H01L 31/103 (2013.01); G01J 1/16 (2013.01); H01L 27/144 (2013.01);
Abstract

There is described a photodetector for detecting incoming infrared light. The photodetector generally has a substrate; an i-type semiconductor region extending along the substrate, the i-type semiconductor region being sandwiched between a p-type semiconductor region and an n-type semiconductor region; a grating coupler being optically connected to one of two ends of the i-type semiconductor region, the grating coupler redirecting incoming infrared light into and along the i-type semiconductor region via the one of the two ends of the i-type semiconductor region for propagation of infrared light along the i-type semiconductor region; and a photocurrent detection circuit electrically connected to the p-type semiconductor region and to the n-type semiconductor region for detecting a photocurrent resulting from said propagation.


Find Patent Forward Citations

Loading…