The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2020
Filed:
Dec. 28, 2018
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Toshiba Electronic Devices & Storage Corporation, Minato-ku, JP;
Masato Izumi, Nonoichi, JP;
KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Minato-ku, JP;
Abstract
A semiconductor device includes second and third semiconductor layers provided on a first semiconductor layer. The second semiconductor layer includes a recess portion and an outer edge portion. The third semiconductor layer is away from the second semiconductor layer in a first direction along a first boundary between the first semiconductor layer and the recess portion. The second semiconductor layer has first and second distributions of a second conductivity type impurity at a vicinity of the first boundary and at a vicinity of a second boundary between the outer edge portion and the first semiconductor layer, respectively. The third semiconductor layer has a third distribution of a second conductivity type impurity at a vicinity of a third boundary between the first semiconductor layer and the third semiconductor layer. The first distribution is substantially same as the second distribution. The third distribution is substantially same as the second distribution.