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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10700212 B1

PDFFull Text
Date of Patent:
Jun. 30, 2020

Filed:

Jan. 26, 2017

Semiconductor device, semiconductor wafer, module, electronic device, and manufacturing method thereof

Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Inventors:

Hiromi Sawai, Atsugi, JP;

Akihisa Shimomura, Atsugi, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;

Attorneys:

Robinson Intellectual Property Law Office, P.C.

Eric J. Robinson

Primary Examiner:

Stephen M Bradley

Assistant Examiner:

Wasiul Haider

Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/786 (2006.01); H01L 27/06 (2006.01); H01L 21/84 (2006.01); H01L 21/8258 (2006.01); H01L 27/088 (2006.01); H01L 27/12 (2006.01); H01L 21/02 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/544 (2006.01); H01L 27/32 (2006.01); H01L 29/66 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 21/0228 (2013.01); H01L 21/8258 (2013.01); H01L 21/84 (2013.01); H01L 21/845 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/544 (2013.01); H01L 27/0688 (2013.01); H01L 27/088 (2013.01); H01L 27/1203 (2013.01); H01L 27/1211 (2013.01); H01L 27/1225 (2013.01); H01L 27/1248 (2013.01); H01L 27/3258 (2013.01); H01L 27/3262 (2013.01); H01L 29/66969 (2013.01); H01L 29/78648 (2013.01); H01L 21/022 (2013.01); H01L 21/0214 (2013.01); H01L 21/0234 (2013.01); H01L 21/02178 (2013.01); H01L 21/02323 (2013.01); H01L 27/0629 (2013.01); H01L 27/092 (2013.01); H01L 2223/54453 (2013.01); H01L 2224/05 (2013.01); H01L 2224/48463 (2013.01);
Abstract

A semiconductor device includes a first insulator, a transistor over the first insulator, a second insulator over the transistor, and a third insulator over the second insulator. The transistor includes an oxide semiconductor. The amount of oxygen released from the second insulator when converted into oxygen molecules is larger than or equal to 1×10molecules/cmand smaller than 1×10molecules/cmin thermal desorption spectroscopy at a surface temperature of a film of the second insulator of higher than or equal to 50° C. and lower than or equal to 500° C. The second insulator includes oxygen, nitrogen, and silicon.

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