The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2020

Filed:

Oct. 18, 2018
Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventors:

Michael Hutzler, Villach, AT;

Franz Hirler, Isen, DE;

Ralf Siemieniec, Villach, AT;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/407 (2013.01); H01L 29/0623 (2013.01); H01L 29/1095 (2013.01); H01L 29/404 (2013.01); H01L 29/41741 (2013.01); H01L 29/4236 (2013.01); H01L 29/66712 (2013.01); H01L 29/66734 (2013.01); H01L 29/781 (2013.01); H01L 29/7802 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 29/41766 (2013.01);
Abstract

In an embodiment, a semiconductor device is provided that includes a semiconductor body having a first conductivity type, a first major surface and a second major surface opposite the first major surface, a gate arranged on the first major surface, a body region having a second conductivity type opposite the first conductivity type, the body region extending into the semiconductor body from the first major surface, a source region having the first conductivity type, the source region being arranged in the body region, a buried channel shielding region having the second conductivity type, a contact region having the second conductivity type, and a field plate arranged in a trench extending into the semiconductor body from the first major surface.


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