The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2020
Filed:
Apr. 29, 2014
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Guillaume Bouche, Albany, NY (US);
Andy Chih-Hung Wei, Queensbury, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/161 (2006.01); H01L 29/16 (2006.01); H01L 23/482 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/161 (2013.01); H01L 23/4824 (2013.01); H01L 29/16 (2013.01); H01L 29/41791 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 2924/0002 (2013.01);
Abstract
Embodiments of the present invention provide a multiple fin field effect transistor (finFET) with low-resistance gate structure. A metallization line is formed in parallel with the gate, and multiple contacts are formed over the fins which connect the metallization line to the gate. The metallization line provides reduced gate resistance, which allows fewer transistors to be used for providing In-Out (IO) functionality, thereby providing space savings that enable an increase in circuit density.