The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2020

Filed:

Oct. 30, 2017
Applicant:

Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;

Inventors:

Shoji Kitamura, Matsumoto, JP;

Tsukasa Tashima, Matsumoto, JP;

Kazuhiro Kitahara, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/06 (2006.01); H01L 29/872 (2006.01); H01L 29/45 (2006.01); H01L 29/47 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/02378 (2013.01); H01L 21/02529 (2013.01); H01L 21/02634 (2013.01); H01L 21/02636 (2013.01); H01L 21/0485 (2013.01); H01L 21/0495 (2013.01); H01L 29/0619 (2013.01); H01L 29/0684 (2013.01); H01L 29/0692 (2013.01); H01L 29/45 (2013.01); H01L 29/47 (2013.01); H01L 29/6606 (2013.01); H01L 29/872 (2013.01); H01L 29/0615 (2013.01);
Abstract

A semiconductor device includes a first semiconductor layer of a first conductivity type provided on a front surface of a silicon carbide semiconductor substrate of the first conductivity type, a first semiconductor region of a second conductivity type, a second semiconductor region of the second conductivity type and connected to the first semiconductor region, a first electrode forming a Schottky-contact with the first semiconductor layer and the first semiconductor region, and a second electrode forming an ohmic contact with the second semiconductor region. The second electrode has a Ti—Al alloy layer on a surface in contact with the first electrode. The second electrode further has therein a nickel silicide layer containing titanium.


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