The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2020
Filed:
Jun. 23, 2017
Olympus Corporation, Hachioji-shi, Tokyo, JP;
Kosei Tamiya, Tokyo, JP;
OLYMPUS CORPORATION, Tokyo, JP;
Abstract
A solid-state imaging device includes a first semiconductor substrate in which first photoelectric conversion layers photoelectrically converting incident light in a first wavelength band are formed, a second semiconductor substrate in which second photoelectric conversion layers photoelectrically converting incident light are formed, a conductive layer disposed between the first semiconductor substrate and the second semiconductor substrate and having conductivity, an insulation film disposed between the second semiconductor substrate and the conductive layer and having an insulation property, in which light passing through the first photoelectric conversion layer, the conductive layer, and the insulation film is incident on the second semiconductor substrate, a predetermined voltage is applied to the conductive layer, and a wavelength of light in a second wavelength band photoelectrically converted by the second photoelectric conversion layer when the predetermined voltage is applied to the conductive layer is longer than when the predetermined voltage is not applied.