logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10700089 B1

PDFFull Text
Date of Patent:
Jun. 30, 2020

Filed:

Feb. 12, 2019

Three-dimensional memory device including locally thickened electrically conductive layers and methods of manufacturing the same

Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Naoto Hojo, Yokkaichi, JP;

Takahiro Tabira, Kuwana, JP;

Yoshitaka Otsu, Yokkaichi, JP;

Assignee:

SANDISK TECHNOLOGIES LLC, Addison, TX (US);

Attorney:

The Marbury Law Group, PLLC

Primary Examiner:

Karen Kusumakar

Assistant Examiner:

Adam S Bowen

Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 27/11565 (2017.01); H01L 27/1157 (2017.01); H01L 27/11573 (2017.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 21/28 (2006.01); H01L 27/11556 (2017.01); H01L 27/11519 (2017.01); H01L 27/11524 (2017.01); H01L 27/11526 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/31116 (2013.01); H01L 21/76802 (2013.01); H01L 27/1157 (2013.01); H01L 27/11565 (2013.01); H01L 27/11573 (2013.01); H01L 29/40117 (2019.08); H01L 27/11519 (2013.01); H01L 27/11524 (2013.01); H01L 27/11526 (2013.01); H01L 27/11556 (2013.01);
Abstract

Fabricating a three-dimensional memory device may include forming an alternating stack of insulating layers and sacrificial material layers over a substrate. Stepped surfaces are formed by patterning the alternating stack. Sacrificial pads are formed on physically exposed horizontal surfaces of the sacrificial material layers. A retro-stepped dielectric material portion is formed over the sacrificial pads. After memory stack structures extending through the alternating stack are formed, the sacrificial material layers and the sacrificial pads can be replaced with replacement material portions that include electrically conductive layers. The electrically conductive layers can be formed with thicker end portions. Contact via structures can be formed on the thicker end portions.

Find Patent Forward Citations

Loading…