The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2020

Filed:

Nov. 15, 2016
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Andreas Meiser, Sauerlach, DE;

Dirk Ahlers, Munich, DE;

Till Schloesser, München, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/78 (2006.01); H03K 17/687 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 21/823481 (2013.01); H01L 21/823487 (2013.01); H01L 29/7813 (2013.01); H03K 17/6871 (2013.01); H01L 21/823418 (2013.01);
Abstract

A semiconductor device includes a first transistor and a second transistor in a semiconductor substrate. The first transistor includes a first drain contact electrically connected to a first drain region, the first drain contact including a first drain contact portion and a second drain contact portion. The first drain contact portion includes a drain conductive material in direct contact with the first drain region. The second transistor includes a second source contact electrically connected to a second source region. The second source contact includes a first source contact portion and a second source contact portion. The first source contact portion includes a source conductive material in direct contact with the second source region.


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