The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2020

Filed:

Jul. 09, 2018
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Jagar Singh, Clifton Park, NY (US);

Edward J. Nowak, Shelburne, VT (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01); H01L 27/088 (2006.01); H01L 21/762 (2006.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01); H01L 21/02 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823481 (2013.01); H01L 21/26513 (2013.01); H01L 21/76224 (2013.01); H01L 21/823431 (2013.01); H01L 21/823493 (2013.01); H01L 27/088 (2013.01); H01L 27/0886 (2013.01); H01L 29/0649 (2013.01); H01L 29/1095 (2013.01); H01L 21/02164 (2013.01); H01L 21/02271 (2013.01); H01L 21/266 (2013.01); H01L 21/31053 (2013.01); H01L 21/823475 (2013.01);
Abstract

Structures for switches and methods for forming structures that include a switch. A first well and a section well are arranged in a substrate. Trench isolation regions are arranged in the substrate to define multiple active device regions. Each of the active device regions includes a section of the first well that is surrounded by the trench isolation regions. The second well has an opposite conductivity type from the first well. The active device regions and the trench isolation regions are arranged between the top surface of the substrate and the second well, and the second well is contiguous with the trench isolation regions.


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