The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2020

Filed:

Feb. 19, 2015
Applicant:

Hitachi High-tech Corporation, Minato-ku, Tokyo, JP;

Inventors:

Yasushi Sonoda, Tokyo, JP;

Motohiro Tanaka, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/308 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/308 (2013.01); H01J 37/32091 (2013.01); H01J 37/3299 (2013.01); H01J 37/32183 (2013.01); H01J 37/32192 (2013.01); H01J 37/32311 (2013.01); H01J 37/32449 (2013.01); H01L 21/3065 (2013.01);
Abstract

A plasma processing apparatus includes a processing chamber configured to perform a plasma processing on a sample, a first radio frequency power supply configured to generate a plasma, a sample stage configured to place the sample thereon, a second radio frequency power supply configured to supply a radio frequency power to the sample stage, a mass flow controller configured to supply a gas into the processing chamber, and a control device configured to change the radio frequency power supplied from the first radio frequency power supply or the second radio frequency power supply based on a change of plasma impedance after a first gas is switched to a second gas.


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