The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2020
Filed:
Jul. 19, 2017
Screen Holdings Co., Ltd., Kyoto, JP;
Hideaki Tanimura, Kyoto, JP;
SCREEN HOLDINGS CO., LTD., Kyoto, JP;
Abstract
A germanium semiconductor layer doped with a dopant such as boron becomes a p-type semiconductor. The semiconductor layer is preheated at a preheating temperature ranging from 200° C. to 300° C., and then heated at a treatment temperature ranging from 500° C. to 900° C., by extremely short-time irradiation of flash light. While oxygen is unavoidably mixed in germanium and becomes a thermal donor at 300° C. to 500° C., the semiconductor layer stays in a temperature range of 300° C. to 500° C. for a negligibly short period of time due to an extremely short irradiation time of 0.1 milliseconds to 100 milliseconds by the flash light. Therefore, the thermal donor can be prevented from being generated in the germanium semiconductor layer.