The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2020
Filed:
Aug. 30, 2018
Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, Guangdong, CN;
Xiangyang Xu, Guangdong, CN;
SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD., Shenzhen, Guangdong, CN;
Abstract
The present disclosure relates to a LTPS, a TFT and a method for manufacturing an array substrate. The method for manufacturing LTPSs includes: providing a substrate, forming a buffer layer on the substrate; forming an amorphous silicon layer on the buffer layer; and performing an excimer laser annealing treatment on the amorphous silicon layer under the shielding of a semi-translucent mask. The laser annealing process converts the amorphous silicon layer into a polysilicon layer. The semi-translucent membrane includes a semi-translucent substrate and a patterned semi-translucent film disposed on the surface of the substrate. The present disclosure also provides a corresponding LTPS TFT and an array substrate manufacturing method. The LTPS, the TFT and the array substrate manufacturing method may enhance the polysilicon crystal effect better, improve the electrical performance of the polysilicon TFT, and the dry etching efficiency of the polysilicon layer.