The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2020
Filed:
Apr. 14, 2019
Rfhic Corporation, Anyang, KR;
Firooz Nasser-Faili, Los Gatos, CA (US);
Daniel Francis, Oakland, CA (US);
Frank Yantis Lowe, Phoenix, AZ (US);
Daniel James Twitchen, High Wycombe, GB;
RFHIC CORPORATION, Anyang, KR;
Abstract
A method of fabricating a semiconductor device structure includes: providing a substrate comprising a layer of compound semiconductor material; forming a seed layer of nano-crystalline diamond having a layer thickness in a range 5 to 50 nm on the layer of compound semiconductor material; and growing a layer of polycrystalline CVD diamond on the seed layer using a chemical vapour deposition (CVD) technique. An effective thermal boundary resistance (TBR) at an interface between the layer of compound semiconductor material and the layer of polycrystalline CVD diamond material is no more than 50 mK/GW.