The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2020
Filed:
Sep. 18, 2014
Shimadzu Corporation, Kyoto-shi, Kyoto, JP;
Daisuke Okumura, Osaka, JP;
SHIMADZU CORPORATION, Kyoto-shi, Kyoto, JP;
Abstract
A voltage applied to an exit gate electrode forming a potential barrier and temporarily trapping ions within the inner space of the ion guide is higher than a voltage at an ion guide's exit end. A higher voltage is applied to the exit gate electrode for a lower m/z value of the measurement target ion, to push back the ion which has slowly moved along a potential gradient and reached the exit end of the ion guide. An ion having a lower m/z value is more likely to be located in a farther region from the exit end and forced to travel a longer distance when voltage applied to the exit gate electrode is lowered. A lower m/z value also means a higher travelling speed toward the orthogonal accelerator, whereby m/z dependency of the time required for travel from the ion guide to the orthogonal accelerator eventually becomes low.