The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2020

Filed:

Jul. 26, 2018
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventors:

Ryo Suemitsu, Yokkaichi, JP;

Takashi Ohashi, Yokkaichi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/263 (2006.01); C23C 16/50 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32669 (2013.01); C23C 16/50 (2013.01); H01J 37/32568 (2013.01); H01L 21/263 (2013.01); H01J 37/32715 (2013.01); H01J 2237/334 (2013.01); H01L 21/67069 (2013.01);
Abstract

In one embodiment, a semiconductor manufacturing apparatus includes a treatment chamber configured to treat a substrate with plasma, a first annular coil configured to generate a first magnetic field to be applied to the plasma, and a second annular coil configured to generate a second magnetic field to be applied to the plasma. The apparatus further includes a first electric current supplying module configured to supply, to the first annular coil, a first electric current flowing in a first direction, and cause the first annular coil to generate the first magnetic field. The apparatus further includes a second electric current supplying module configured to supply, to the second annular coil, a second electric current flowing in a second direction that is different from the first direction, and cause the second annular coil to generate the second magnetic field.


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