The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2020

Filed:

Aug. 23, 2018
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Chang Hyun Kim, Seoul, KR;

Yong Mi Kim, Gyeonggi-do, KR;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/10 (2006.01); G11C 29/52 (2006.01); G11C 7/10 (2006.01); G11C 29/04 (2006.01);
U.S. Cl.
CPC ...
G06F 11/1068 (2013.01); G06F 11/1048 (2013.01); G11C 7/1006 (2013.01); G11C 7/1051 (2013.01); G11C 7/1069 (2013.01); G11C 7/1096 (2013.01); G11C 29/52 (2013.01); G11C 2029/0411 (2013.01);
Abstract

A semiconductor device includes a read data generation circuit and a syndrome generation circuit. The read data generation circuit generates first read data from first output data and a first output parity which are generated during a first read operation. In addition, the read data generation circuit generates second read data from second output data and a second output parity which are generated during a second read operation. The syndrome generation circuit generates a syndrome signal from the first read data and the second read data. The syndrome generation circuit generates the syndrome signal so that column vectors of a first half matrix corresponding to the first read data are symmetric to column vectors of a second half matrix corresponding to the second read data.


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