The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2020

Filed:

Apr. 19, 2018
Applicant:

Asahi Kasei Microdevices Corporation, Tokyo, JP;

Inventor:

Toshiaki Fukunaka, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 15/20 (2006.01); H01L 23/00 (2006.01); H01L 23/495 (2006.01);
U.S. Cl.
CPC ...
G01R 15/202 (2013.01); G01R 15/207 (2013.01); H01L 24/49 (2013.01); H01L 24/85 (2013.01); H01L 23/49541 (2013.01); H01L 23/49548 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48195 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/4912 (2013.01); H01L 2224/85005 (2013.01); H01L 2924/181 (2013.01);
Abstract

A current sensor (current detection device)includes a conductorthrough which measurement-target current flows, a magnetic sensorthat detects magnetic fields generated by current flowing through the conductor and a packagethat, together with at least part of the conductor, separates the magnetic sensor from the conductor and covers and seals in their outer surfaces. Together with a curved portionof the conductor, the package separates, from the conductor through which measurement-target current flows, the magnetic sensor that detects magnetic fields generated by current flowing through the conductor and covers and seals in their outer surfaces so that an interface that can spread in the package, in which the magnetic sensor is embedded, from its boundaries with it is not formed; therefore, a high withstand voltage can be obtained.


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