The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2020
Filed:
May. 06, 2016
Applicant:
The Board of Regents of the University of Texas System, Austin, TX (US);
Inventors:
Allen J. Bard, Austin, TX (US);
Huayi Yin, Austin, TX (US);
Assignee:
Board of Regents of the University of Texas System, Austin, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
C25D 3/66 (2006.01); C25D 9/04 (2006.01); H01L 21/02 (2006.01); H01L 31/18 (2006.01); C25D 9/08 (2006.01); C25B 1/00 (2006.01); C25D 21/12 (2006.01); H01L 21/66 (2006.01); H01L 31/0445 (2014.01); H01L 31/068 (2012.01);
U.S. Cl.
CPC ...
C25D 9/04 (2013.01); C25B 1/006 (2013.01); C25D 9/08 (2013.01); C25D 21/12 (2013.01); H01L 21/02376 (2013.01); H01L 21/02425 (2013.01); H01L 21/02532 (2013.01); H01L 21/02603 (2013.01); H01L 21/02628 (2013.01); H01L 22/14 (2013.01); H01L 31/182 (2013.01); H01L 31/1804 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/02625 (2013.01); H01L 31/0445 (2014.12); H01L 31/068 (2013.01); Y02E 10/546 (2013.01); Y02P 70/521 (2015.11);
Abstract
Photoactive silicon films may be formed by electrodeposition from a molten salt electrolyte. In an embodiment, SiOis electrochemically reduced in a molten salt bath to deposit silicon on a carbonaceous substrate.