The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2020
Filed:
Apr. 07, 2017
Qualcomm Incorporated, San Diego, CA (US);
Andrei Radulescu, San Diego, CA (US);
Vinay Chande, San Diego, CA (US);
Jen Chen, La Jolla, CA (US);
Christophe Chevallier, San Diego, CA (US);
Farhad Meshkati, San Diego, CA (US);
Sanjiv Nanda, San Diego, CA (US);
Damanjit Singh, San Diego, CA (US);
Mehmet Yavuz, San Diego, CA (US);
Sumeeth Nagaraja, San Diego, CA (US);
Yan Zhou, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
Methods and apparatuses are provided for causing active hand-in of a device from a macrocell base station to a femto node, which can be an inter-frequency hand-in. The femto node can broadcast a beacon, which can be received and reported by a device to a source base station along with one or more parameters. The source base station can communicate a handover message to the femto node or a related femto gateway along with the one or more parameters. The femto node or femto gateway can disambiguate the intended target femto node based in part on the one or more parameters, which can include applying one or more filters. Applying the one or more filters may include applying an UL RSSI filter to the one or more femto nodes to determine whether presence of the device causes a rise in UL RSSI measured at the one or more femto nodes.