The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2020

Filed:

Sep. 26, 2018
Applicant:

Brillnics Inc., Grand Cayman, KY;

Inventors:

Kazuya Mori, Tokyo, JP;

Toshinori Otaka, Tokyo, JP;

Isao Takayanagi, Tokyo, JP;

Assignee:

BRILLNICS INC., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/353 (2011.01); H04N 5/374 (2011.01); H04N 5/355 (2011.01); H01L 27/146 (2006.01); H04N 5/378 (2011.01); H04N 5/357 (2011.01); H04N 5/3745 (2011.01); H04N 5/369 (2011.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H04N 5/353 (2013.01); H01L 27/1461 (2013.01); H01L 27/1464 (2013.01); H01L 27/14609 (2013.01); H01L 27/14612 (2013.01); H01L 27/14634 (2013.01); H04N 5/3559 (2013.01); H04N 5/378 (2013.01); H04N 5/379 (2018.08); H04N 5/3741 (2013.01); H04N 5/37452 (2013.01); H04N 5/37455 (2013.01); H01L 24/16 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14636 (2013.01); H01L 27/14643 (2013.01); H01L 2224/16145 (2013.01); H04N 5/357 (2013.01);
Abstract

A solid-state imaging device, in which a signal holding part can hold a signal with respect to a voltage signal corresponding to an accumulated charge in a photoelectric conversion element of a photodiode PDwhich is transferred to an output node of a floating diffusion FDin a transfer period after an integration period and a signal with respect to a voltage signal corresponding to an overflow charge overflowing to the output node of the floating diffusion FDfrom at least the photodiode PDin any period among the photoelectric conversion element of the photodiode PDand the storage capacity element of the storage capacitor. Due to this, substantially, it becomes possible to realize a broader dynamic range and higher frame rate.


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