The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2020
Filed:
Mar. 07, 2016
Applicant:
The Regents of the University of California, Oakland, CA (US);
Inventors:
Assignee:
The Regents of the University of California, Oakland, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/00 (2006.01); H01L 51/42 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0032 (2013.01); H01L 51/422 (2013.01); H01L 51/4233 (2013.01); H01L 51/4246 (2013.01); H01L 51/0037 (2013.01); H01L 2251/308 (2013.01); Y02E 10/549 (2013.01);
Abstract
An opto-electronic device includes a first electrode, a first buffer layer formed on the first electrode, and a perovskite semiconductor active layer formed on the first buffer layer. The opto-electronic device further includes a second buffer layer formed on the perovskite semiconductor active layer, and a second electrode formed on the second buffer layer. The first buffer layer, the second buffer layer, and the perovskite semiconductor active layer each consists essentially of inorganic materials.